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Title: Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10{sup 20} cm{sup –3} shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.
Authors:
; ; ; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [2] ;  [5]
  1. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany)
  2. Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain)
  3. Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)
  4. Laboratorio de Microscopías Avanzadas, Instituto de Nanociencia de Aragon-ARAID, Universidad de Zaragoza, 50018 Zaragoza (Spain)
  5. (ICREA), 08010 Barcelona, CAT (Spain)
Publication Date:
OSTI Identifier:
22257213
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ALUMINIUM NITRIDES; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM NITRIDES; GERMANIUM; PHOTOLUMINESCENCE; STARK EFFECT; SUPERLATTICES