Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868411· OSTI ID:22257213

Müßener, J.; Becker, P.; Teubert, J.; Schörmann, J.; Eickhoff, M. ^[1]; Mata, M. de la ^[2]; Rosemann, N.; Chatterjee, S. ^[3]; Magén, C. ^[4]; Arbiol, J. ^[2]

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1. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen (Germany)
2. Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, 08193 Bellaterra, CAT (Spain)
3. Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg (Germany)
4. Laboratorio de Microscopías Avanzadas, Instituto de Nanociencia de Aragon-ARAID, Universidad de Zaragoza, 50018 Zaragoza (Spain)

We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10{sup 20} cm{sup –3} shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

• OSTI ID: 22257213
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM NITRIDES
CONCENTRATION RATIO
DOPED MATERIALS
GALLIUM NITRIDES
GERMANIUM
PHOTOLUMINESCENCE
STARK EFFECT
SUPERLATTICES