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Title: Evaluating the size-dependent quantum efficiency loss in a SiO{sub 2}-Y{sub 2}O{sub 3} hybrid gated type-II InAs/GaSb long-infrared photodetector array

Growing Y{sub 2}O{sub 3} on 20 nm SiO{sub 2} to passivate a 11 μm 50% cut-off wavelength long-wavelength infrared type-II superlattice gated photodetector array reduces its saturated gate bias (V{sub G,sat}) to −7 V. Size-dependent quantum efficiency (QE) losses are evaluated from 400 μm to 57 μm size gated photodiode. Evolution of QE of the 57 μm gated photodiode with gate bias and diode operation bias reveals different surface recombination mechanisms. At 77 K and V{sub G,sat}, the 57 μm gated photodiode exhibits QE enhancement from 53% to 63%, and it has 1.2 × 10{sup −5} A/cm{sup 2} dark current density at −200 mV, and a specific detectivity of 2.3 × 10{sup 12} Jones.
Authors:
; ;  [1]
  1. Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States)
Publication Date:
OSTI Identifier:
22257208
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; QUANTUM EFFICIENCY; RADIATION DETECTORS; SILICA; SILICON OXIDES; SUPERLATTICES; YTTRIUM OXIDES