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Title: Magnetic resonance investigation of Zn{sub 1−x}Fe{sub x}O properties influenced by annealing atmosphere

ZnO is an attractive system for a wide variety of practical applications, being a chemically stable oxide semiconductor. It has been shown that Fe doping produces ferromagnetic semiconductor at room temperature. This material, therefore, has the potential for use in spintronic devices such as spin transistors, spin light emitting diodes, very high density nonvolatile semiconductor memory and optical emitters. It is believed that oxygen vacancies and substitutional incorporation are important to produce ferromagnetism in semiconductor oxide doped with transition metal ions. The present paper reports detailed electron paramagnetic resonance investigations (EPR) of the samples in order to investigate how annealing atmosphere (Air and Argon) influenced the magnetic behavior of the samples. X-band electron paramagnetic resonance (EPR) studies of Fe{sup 3+} ions in Zn{sub 1−x}Fe{sub x}O powders with x = 1%, 3% is reported. These samples are interesting to investigate as Fe doping produce ferromagnetism in ZnO, making a promising ferromagnetic semiconductor at room temperature.
Authors:
; ; ; ;  [1]
  1. National Institute for Research and Development of Isotopic and Molecular Technologies Donath 65-103, 400293, Cluj-Napoca (Romania)
Publication Date:
OSTI Identifier:
22257189
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1565; Journal Issue: 1; Conference: PIM 2013: International conference on processes in isotopes and molecules, Cluj Napoca (Romania), 25-27 Sep 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANNEALING; DENSITY; DOPED MATERIALS; ELECTRON SPIN RESONANCE; FERROMAGNETISM; IRON IONS; LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENTS; ZINC OXIDES