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Title: The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) based spin valves, single Alq{sub 3} layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq{sub 3}, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq{sub 3} based spin valves with NiFe or Fe electrodes are holes.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2]
  1. Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)
  2. (China)
Publication Date:
OSTI Identifier:
22257157
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; CHARGE CARRIERS; ELECTRON MOBILITY; HOLE MOBILITY; IRON; NICKEL; OXINE; SPIN; TIME-OF-FLIGHT METHOD