The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts

Zhang, Hongtao; Desai, P.; Kreouzis, T.; Zhan, Y. Q.; Drew, A. J.; Gillin, W. P.

doi:10.1063/1.4861120

Title: The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts

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Abstract

To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) based spin valves, single Alq{sub 3} layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq{sub 3}, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq{sub 3} based spin valves with NiFe or Fe electrodes are holes.

Authors:

Zhang, Hongtao; Desai, P.; Kreouzis, T. ^[1]; Zhan, Y. Q. ^[1]; Drew, A. J. ^[1]; Gillin, W. P. ^[1]

Materials Research Institute, School of Physics and Astronomy, Queen Mary University of London, Mile End Road, London E1 4NS (United Kingdom)

Publication Date:: Mon Jan 06 00:00:00 EST 2014

OSTI Identifier:: 22257157

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; ALUMINIUM; CHARGE CARRIERS; ELECTRON MOBILITY; HOLE MOBILITY; IRON; NICKEL; OXINE; SPIN; TIME-OF-FLIGHT METHOD

Citation Formats


                    Zhang, Hongtao, Desai, P., Kreouzis, T., Zhan, Y. Q., State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433, Drew, A. J., College of Physical Science and Technology, Sichuan University, Chengdu 610064, Gillin, W. P., State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433, and College of Physical Science and Technology, Sichuan University, Chengdu 610064. The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4861120.

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                    Zhang, Hongtao, Desai, P., Kreouzis, T., Zhan, Y. Q., State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433, Drew, A. J., College of Physical Science and Technology, Sichuan University, Chengdu 610064, Gillin, W. P., State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433, & College of Physical Science and Technology, Sichuan University, Chengdu 610064. The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts.  United States.  https://doi.org/10.1063/1.4861120

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                    Zhang, Hongtao, Desai, P., Kreouzis, T., Zhan, Y. Q., State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433, Drew, A. J., College of Physical Science and Technology, Sichuan University, Chengdu 610064, Gillin, W. P., State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433, and College of Physical Science and Technology, Sichuan University, Chengdu 610064. 2014.  
        "The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts".  United States.  https://doi.org/10.1063/1.4861120.

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@article{osti_22257157,

  title        = {The importance of holes in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) devices with Fe and NiFe contacts},

  author       = {Zhang, Hongtao and Desai, P. and Kreouzis, T. and Zhan, Y. Q. and State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433 and Drew, A. J. and College of Physical Science and Technology, Sichuan University, Chengdu 610064 and Gillin, W. P. and State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433 and College of Physical Science and Technology, Sichuan University, Chengdu 610064},

  abstractNote = {To study the dominant charge carrier polarity in aluminium tris-8-hydroxyquinoline (Alq{sub 3}) based spin valves, single Alq{sub 3} layer devices with NiFe, ITO, Fe, and aluminium electrodes were fabricated and characterised by Time of Flight (ToF) and Dark Injection (DI) techniques, yielding a lower hole mobility compared to electron mobility. We compare the mobility measured by DI for the dominant carrier injected from NiFe and Fe electrodes into Alq{sub 3}, to that of holes measured by ToF. This comparison leads us to conclude that the dominant charge carriers in Alq{sub 3} based spin valves with NiFe or Fe electrodes are holes.},

  doi          = {10.1063/1.4861120},

  url          = {https://www.osti.gov/biblio/22257157},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 1,

  volume       = 104,

  place        = {United States},

  year         = {Mon Jan 06 00:00:00 EST 2014},

  month        = {Mon Jan 06 00:00:00 EST 2014}

}

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