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Title: Three-terminal resistive switching memory in a transparent vertical-configuration device

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.
Authors:
;  [1] ; ;  [1] ;  [2]
  1. CIC nanoGUNE Consolider, Donostia - San Sebastian (Spain)
  2. (Spain)
Publication Date:
OSTI Identifier:
22257150
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIELECTRIC MATERIALS; MEMORY DEVICES; OXIDES