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Title: Quantum pumping of valley current in strain engineered graphene

We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50‚ÄČnA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices.
Authors:
 [1] ;  [2] ;  [3] ;  [1]
  1. Department of Physics, University of Science and Technology of China, Hefei (China)
  2. (China)
  3. Department of Physics and Materials Science and Centre for Functional Photonics, City University of Hong Kong, Hong Kong and City University of Hong Kong Shenzhen Research Institute, Shenzhen (China)
Publication Date:
OSTI Identifier:
22257148
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GRAPHENE; OPTICAL PUMPING; RESONANCE