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Title: Quantum pumping of valley current in strain engineered graphene

Abstract

We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices.

Authors:
 [1];  [1]
  1. Department of Physics, University of Science and Technology of China, Hefei (China)
Publication Date:
OSTI Identifier:
22257148
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; GRAPHENE; OPTICAL PUMPING; RESONANCE

Citation Formats

Wang, Jing, Department of Physics and Materials Science and Centre for Functional Photonics, City University of Hong Kong, Hong Kong and City University of Hong Kong Shenzhen Research Institute, Shenzhen, Chan, K. S., E-mail: apkschan@cityu.edu.hk, E-mail: zjlin@ustc.edu.cn, and Lin, Zijing. Quantum pumping of valley current in strain engineered graphene. United States: N. p., 2014. Web. doi:10.1063/1.4861119.
Wang, Jing, Department of Physics and Materials Science and Centre for Functional Photonics, City University of Hong Kong, Hong Kong and City University of Hong Kong Shenzhen Research Institute, Shenzhen, Chan, K. S., E-mail: apkschan@cityu.edu.hk, E-mail: zjlin@ustc.edu.cn, & Lin, Zijing. Quantum pumping of valley current in strain engineered graphene. United States. https://doi.org/10.1063/1.4861119
Wang, Jing, Department of Physics and Materials Science and Centre for Functional Photonics, City University of Hong Kong, Hong Kong and City University of Hong Kong Shenzhen Research Institute, Shenzhen, Chan, K. S., E-mail: apkschan@cityu.edu.hk, E-mail: zjlin@ustc.edu.cn, and Lin, Zijing. 2014. "Quantum pumping of valley current in strain engineered graphene". United States. https://doi.org/10.1063/1.4861119.
@article{osti_22257148,
title = {Quantum pumping of valley current in strain engineered graphene},
author = {Wang, Jing and Department of Physics and Materials Science and Centre for Functional Photonics, City University of Hong Kong, Hong Kong and City University of Hong Kong Shenzhen Research Institute, Shenzhen and Chan, K. S., E-mail: apkschan@cityu.edu.hk, E-mail: zjlin@ustc.edu.cn and Lin, Zijing},
abstractNote = {We studied the generation of valley dependent current by adiabatic quantum pumping in monolayer graphene in the presence of electric potential barriers, ferromagnetic field and strain. The pumped currents in the two valleys have same magnitudes and opposite directions; thus, a pure valley current is generated. The oscillation of the pumped pure valley current is determined by the Fabry-Perot resonances formed in the structure. In our calculation, the pumped pure valley current can be as high as 50 nA, which is measurable using present technologies. The proposed device is useful for the development of graphene valleytronic devices.},
doi = {10.1063/1.4861119},
url = {https://www.osti.gov/biblio/22257148}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 104,
place = {United States},
year = {Mon Jan 06 00:00:00 EST 2014},
month = {Mon Jan 06 00:00:00 EST 2014}
}