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Title: p-type GaN grown by phase shift epitaxy

Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4 × 10{sup 18} cm{sup −3})
Authors:
;  [1] ;  [2] ; ;  [3]
  1. Department of Electrical Engineering and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States)
  2. Nitronex Corporation, Raleigh, North Carolina 27606 (United States)
  3. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
Publication Date:
OSTI Identifier:
22257144
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM NITRIDES; HOLES; MOLECULAR BEAM EPITAXY; PHASE SHIFT