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Title: Effect of tungsten doping in bismuth-layered Na{sub 0.5}Bi{sub 2.5}Nb{sub 2}O{sub 9} high temperature piezoceramics

The effects of W{sup 6+} doping for B site on the structural and electrical properties of Na{sub 0.5}Bi{sub 2.5}Nb{sub 2}O{sub 9}-based ceramics were studied. It shows a trend of preferable orientation growth along c-axis and the Curie point (T{sub c}) decreases slightly from 792 to 761 °C with the increasing W{sup 6+} amount. The electrical resistivity of Na{sub 0.5}Bi{sub 2.5}Nb{sub 2}O{sub 9}-based ceramics increases as much as about two orders of magnitude and the piezoelectric constant d{sub 33} is significantly improved from 10.5 to 21.8 pC/N by W{sup 6+} modification. The composition of Na{sub 0.5}Bi{sub 2.5}Nb{sub 1.99}W{sub 0.01}O{sub 9} with a high T{sub c} (792 °C), very good temperature stability up to ∼0.96T{sub c}, a large d{sub 33} of 17.9 pC/N and sufficient high resistivity, is an excellent candidate for high temperature piezoelectric applications.
Authors:
; ; ;  [1]
  1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22257137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BISMUTH; CURIE POINT; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; PIEZOELECTRICITY; TUNGSTEN IONS