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Title: Spin-Hall-assisted magnetic random access memory

We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy. A sub-nanosecond in-plane polarized spin current pulse is generated using the spin-Hall effect, disturbing the stable magnetic state. Subsequent switching using out-of-plane polarized spin current becomes highly efficient. Through evaluation of the Landau-Lifshitz-Gilbert equation, we quantitatively assess the viability of this write scheme for a wide range of system parameters. A typical example shows an eight-fold reduction in tunnel current density, corresponding to a fifty-fold reduction in write energy, while maintaining a 1‚ÄČns write time.
Authors:
; ;  [1] ; ; ; ;  [2] ; ;  [2] ;  [3]
  1. Physics of Nanostructures, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
  2. imec, Kapeldreef 75, B-3001 Leuven (Belgium)
  3. (ESAT), KU Leuven, Kasteelpark Arenberg 10, B-3001 Heverlee (Belgium)
Publication Date:
OSTI Identifier:
22257135
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; HALL EFFECT; MAGNETORESISTANCE; SPIN; TUNNEL EFFECT