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Title: Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection

A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H{sub 2}) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H{sub 2} detection. The drain current of the PdNP-decorated device reversibly responds to H{sub 2} at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Mechanical Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
  2. (Korea, Republic of)
  3. (MOSAIC) Center, KAIST, Daejeon 305-701 (Korea, Republic of)
  4. Department of Electrical Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22257127
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; HYDROGEN; NANOSTRUCTURES; PALLADIUM; SILICON; SURFACES