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Title: Bias-dependent interface roughening and its effect on electric bistability of organic devices

Atomic force microscopy (AFM), field-emission scanning electron microscopy, and energy dispersive X-Ray spectroscopy are used to study morphological and compositional variations of metal-organic interfaces in organic bistable devices. The results show that bias voltage causes rougher interfaces with new protrusions, and the switching phenomena origins from the evolution of these protrusions under external electric field. In order to exclude other possible factors, three types of bistable devices are designed and examined. In addition, metal-coated AFM probes are utilized to simulate the switching process, which yields similar results and corroborates our conclusion.
Authors:
; ; ; ; ; ;  [1] ;  [2]
  1. Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China)
  2. State Key Laboratory of ASIC and System, Department of Microelectronics, SIST, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22257118
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; EQUIPMENT; FIELD EMISSION; ORGANOMETALLIC COMPOUNDS; SCANNING ELECTRON MICROSCOPY; X-RAY SPECTROSCOPY