(In,Ga)As/GaP electrical injection quantum dot laser

Höfling, S.; Kamp, M.

doi:10.1063/1.4860982

Title: (In,Ga)As/GaP electrical injection quantum dot laser

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Abstract

The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.

Authors:

Höfling, S.; Kamp, M. ^[1]

Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)

Publication Date:: Mon Jan 06 00:00:00 EST 2014

OSTI Identifier:: 22257117

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM PHOSPHIDES; LASERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; THRESHOLD CURRENT; WAVEGUIDES

Citation Formats


                    Heidemann, M., E-mail: matthias.heidemann@physik.uni-wuerzburg.de, Höfling, S., and Kamp, M. (In,Ga)As/GaP electrical injection quantum dot laser.  United States: N. p., 2014. 
        Web.  doi:10.1063/1.4860982.

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                    Heidemann, M., E-mail: matthias.heidemann@physik.uni-wuerzburg.de, Höfling, S., & Kamp, M. (In,Ga)As/GaP electrical injection quantum dot laser.  United States.  https://doi.org/10.1063/1.4860982

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                    Heidemann, M., E-mail: matthias.heidemann@physik.uni-wuerzburg.de, Höfling, S., and Kamp, M. 2014.  
        "(In,Ga)As/GaP electrical injection quantum dot laser".  United States.  https://doi.org/10.1063/1.4860982.

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@article{osti_22257117,

  title        = {(In,Ga)As/GaP electrical injection quantum dot laser},

  author       = {Heidemann, M., E-mail: matthias.heidemann@physik.uni-wuerzburg.de and Höfling, S. and Kamp, M.},

  abstractNote = {The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.},

  doi          = {10.1063/1.4860982},

  url          = {https://www.osti.gov/biblio/22257117},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 1,

  volume       = 104,

  place        = {United States},

  year         = {Mon Jan 06 00:00:00 EST 2014},

  month        = {Mon Jan 06 00:00:00 EST 2014}

}

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https://doi.org/10.1063/1.4860982

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