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Title: (In,Ga)As/GaP electrical injection quantum dot laser

The paper reports on the realization of multilayer (In,Ga)As/GaP quantum dot (QD) lasers grown by gas source molecular beam epitaxy. The QDs have been embedded in (Al,Ga)P/GaP waveguide structures. Laser operation at 710 nm is obtained for broad area laser devices with a threshold current density of 4.4 kA/cm{sup 2} at a heat-sink temperature of 80 K.
Authors:
; ;  [1]
  1. Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg (Germany)
Publication Date:
OSTI Identifier:
22257117
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM PHOSPHIDES; LASERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; THRESHOLD CURRENT; WAVEGUIDES