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Title: Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

We have investigated electrical characteristics of leakage current paths in n-GaN layer grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy (C-AFM). The C-AFM mapping shows two kinds of leakage current paths existing in the n-GaN layer: open-core dislocation and pure screw dislocation. From the localized I-V curves measured by C-AFM, we confirmed that the open-core screw dislocation shows more significant leakage current. We explained these results in terms of a modified Schottky band model based on donor states formed by oxygen segregation at the (10−10) sidewall of the open-core screw dislocation.
Authors:
;  [1] ; ;  [2] ;  [1] ;  [3] ;  [4] ;  [5] ;  [1] ;  [3] ;  [3] ;  [3]
  1. Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)
  2. WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
  3. (Korea, Republic of)
  4. Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
  5. Korea Research Institute of Chemical Technology, Daejon 305-600 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22257068
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; LEAKAGE CURRENT; ORGANOMETALLIC COMPOUNDS; OXYGEN; SCREW DISLOCATIONS; SEGREGATION