Investigation of leakage current paths in n-GaN by conductive atomic force microscopy

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868127· OSTI ID:22257068

Kim, Bumho; Park, Yongjo ^[1]; Moon, Daeyoung; Nanishi, Yasushi ^[2]; Joo, Kisu ^[1]; Oh, Sewoung ^[3]; Lee, Young Kuk ^[4]; Yoon, Euijoon ^[1]

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1. Energy Semiconductor Research Center, Advanced Institutes of Convergence Technology, Seoul National University, Suwon 443-270 (Korea, Republic of)
2. WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
3. Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)
4. Korea Research Institute of Chemical Technology, Daejon 305-600 (Korea, Republic of)

We have investigated electrical characteristics of leakage current paths in n-GaN layer grown by metal-organic chemical vapor deposition with conductive-atomic force microscopy (C-AFM). The C-AFM mapping shows two kinds of leakage current paths existing in the n-GaN layer: open-core dislocation and pure screw dislocation. From the localized I-V curves measured by C-AFM, we confirmed that the open-core screw dislocation shows more significant leakage current. We explained these results in terms of a modified Schottky band model based on donor states formed by oxygen segregation at the (10−10) sidewall of the open-core screw dislocation.

• OSTI ID: 22257068
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
LEAKAGE CURRENT
ORGANOMETALLIC COMPOUNDS
OXYGEN
SCREW DISLOCATIONS
SEGREGATION