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Title: Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on a Si substrate with a SiGe graded buffer grown using molecular beam epitaxy. For comparison, the performance of a similar 1 eV GaN{sub 0.018}As{sub 0.897}Sb{sub 0.085} photovoltaic cell grown on a GaAs substrate was also reported. Both devices were in situ annealed at 700 °C for 5 min, and a significant performance improvement over our previous result was observed. The device on the GaAs substrate showed a low open circuit voltage (V{sub OC}) of 0.42 V and a short circuit current density (J{sub SC}) of 23.4 mA/cm{sup 2} while the device on the Si substrate showed a V{sub OC} of 0.39 V and a J{sub SC} of 21.3 mA/cm{sup 2}. Both devices delivered a quantum efficiency of 50%–55% without any anti-reflection coating.
Authors:
; ; ; ; ;  [1] ; ; ; ;  [2]
  1. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)
  2. Massachusetts Institute of Technology, 77 Massachusetts Ave., Cambridge, Massachusetts 02139 (United States)
Publication Date:
OSTI Identifier:
22257066
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL GROWTH; GALLIUM ARSENIDES; GALLIUM NITRIDES; GERMANIUM SILICIDES; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC CELLS; QUANTUM EFFICIENCY; SILICON; SUBSTRATES