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Title: Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al{sub 2}O{sub 3}/Zn-doped Al{sub 2}O{sub 3}/Al{sub 2}O{sub 3} stacks

We studied how electrical erasing of indium gallium zinc oxide-thin-film-transistor memory was improved by adding concurrent irradiation with monochromatic light (ML). At fixed gate bias, irradiating at wavelengths of ≤500 nm increased the erasing window (ΔV{sub th-e}) significantly: At a gate bias of −20 V and an erasing time of 5 min, ML irradiation at 400 nm increased ΔV{sub th-e} from 0.29 to 3.21 V. ΔV{sub th-e} increased incrementally with gate bias, erasing time, and ML power density, particularly at short ML wavelengths. Analyzing our experimental results, we discuss the underlying erasure mechanisms.
Authors:
; ; ; ; ;  [1]
  1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)
Publication Date:
OSTI Identifier:
22257063
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; DOPED MATERIALS; GALLIUM; INDIUM; IRRADIATION; MONOCHROMATIC RADIATION; THIN FILMS; TRANSISTORS; ZINC OXIDES