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Title: Frequency-dependent quantum capacitance and plasma wave in monolayer transition metal dichalcogenides

Frequency-dependent quantum capacitance C{sub Q} of monolayer transition metal dichalcogenides (TMDs) is computed and compared to that of graphene. It is found that the frequency dependence of C{sub Q} in TMDs differs drastically from that of graphene which has a divergent point. The plasma resonance forms when the quantum capacitance is negative and has the same magnitude as the electrostatic capacitance. The calculation shows that the plasma in TMDs depends on the band-structure-limited velocity, band gap, and doping density, which can be controlled via gate biases. The plasma frequencies of TMDs are in the rage of terahertz useful for various applications.
Authors:
;  [1]
  1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22257047
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; FREQUENCY DEPENDENCE; GRAPHENE; LANGMUIR FREQUENCY; PLASMA WAVES; RESONANCE; TRANSITION ELEMENTS