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Title: Radio-frequency dispersive detection of donor atoms in a field-effect transistor

Radio-frequency dispersive read-out can provide a useful probe to nano-scale structures, such as nano-wire devices, especially, when the implementation of charge sensing is not straightforward. Here, we demonstrate dispersive “gate-only” read-out of phosphor donors in a silicon nano-scale transistor. The technique enables access to states that are only tunnel-coupled to one contact, which is not easily achievable by other methods. This allows us to locate individual randomly placed donors in the device channel. Furthermore, the setup is naturally compatible with high bandwidth access to the probed donor states and may aid the implementation of a qubit based on coupled donors.
Authors:
;  [1] ;  [2]
  1. Centre for Quantum Computation and Communication Technology, University of New South Wales, Sydney NSW 2052 (Australia)
  2. CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France)
Publication Date:
OSTI Identifier:
22257045
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ATOMS; FIELD EFFECT TRANSISTORS; NANOSTRUCTURES; RADIOWAVE RADIATION; SILICON; WIRES