Cavity enhanced terahertz modulation

Journal Article · Mon Mar 10 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868416· OSTI ID:22257040

Scheller, M.; Moloney, J. V. ^[1]; Koch, M. ^[2]

---

1. College of Optical Sciences, University of Arizona, 1630 E University Boulevard, Tucson, Arizona 85721 (United States)
2. Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)

We present a versatile concept for all optical terahertz (THz) amplitude modulators based on a Fabry-Pérot semiconductor cavity design. Employing the high reflectivity of two parallel meta-surfaces allows for trapping selected THz photons within the cavity and thus only a weak optical modulation of the semiconductor absorbance is required to significantly damp the field within the cavity. The optical switching yields to modulation depths of more than 90% with insertion efficiencies of 80%.

• OSTI ID: 22257040
• Journal Information: Applied Physics Letters, Vol. 104, Issue 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
FABRY-PEROT INTERFEROMETER
PHOTONS
REFLECTIVITY
SEMICONDUCTOR MATERIALS
TRAPPING