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Title: Luminescence and electrical properties of single ZnO/MgO core/shell nanowires

To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1 V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Laboratorio de Física del Sólido, Dep. de Física, FACET, Universidad Nacional de Tucumán, Tucumán, and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina)
  2. Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, D-04103 Leipzig (Germany)
  3. Laboratorio de Nanomateriales y Propiedades Dieléctricas, Dep. de Física, FACET, Universidad Nacional de Tucumán, Tucumán (Argentina)
Publication Date:
OSTI Identifier:
22257039
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRIC CONDUCTIVITY; ELECTRONS; LUMINESCENCE; MAGNESIUM OXIDES; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION; ZINC OXIDES