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Title: Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

Abstract

In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

Authors:
; ; ; ; ;
Publication Date:
OSTI Identifier:
22257038
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; MANGANESE; PRECIPITATION; QUANTUM DOTS; SILICON

Citation Formats

Prestat, E., E-mail: eric.prestat@gmail.com, Porret, C., Favre-Nicolin, V., Tainoff, D., Boukhari, M., Bayle-Guillemaud, P., Jamet, M., and Barski, A., E-mail: andre.barski@cea.com. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon. United States: N. p., 2014. Web. doi:10.1063/1.4867651.
Prestat, E., E-mail: eric.prestat@gmail.com, Porret, C., Favre-Nicolin, V., Tainoff, D., Boukhari, M., Bayle-Guillemaud, P., Jamet, M., & Barski, A., E-mail: andre.barski@cea.com. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon. United States. https://doi.org/10.1063/1.4867651
Prestat, E., E-mail: eric.prestat@gmail.com, Porret, C., Favre-Nicolin, V., Tainoff, D., Boukhari, M., Bayle-Guillemaud, P., Jamet, M., and Barski, A., E-mail: andre.barski@cea.com. 2014. "Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon". United States. https://doi.org/10.1063/1.4867651.
@article{osti_22257038,
title = {Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon},
author = {Prestat, E., E-mail: eric.prestat@gmail.com and Porret, C. and Favre-Nicolin, V. and Tainoff, D. and Boukhari, M. and Bayle-Guillemaud, P. and Jamet, M. and Barski, A., E-mail: andre.barski@cea.com},
abstractNote = {In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.},
doi = {10.1063/1.4867651},
url = {https://www.osti.gov/biblio/22257038}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 104,
place = {United States},
year = {Mon Mar 10 00:00:00 EDT 2014},
month = {Mon Mar 10 00:00:00 EDT 2014}
}