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Title: Magneto-photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Photoluminescence (PL) and highly circularly polarized magneto-PL (up to 50% at 6‚ÄČT) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QWs. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL lines are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest the electron and the hole g-factor to be of the same sign and close magnitudes.
Authors:
 [1] ;  [2] ; ; ; ; ; ;  [1] ; ; ; ;  [3]
  1. Physics Department, University of Regensburg, 93040 Regensburg (Germany)
  2. (Russian Federation)
  3. Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)
Publication Date:
OSTI Identifier:
22257034
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONS; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; LANDE FACTOR; MAGNETIC FIELDS; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; QUANTUM WELLS; RECOMBINATION; SPIN ORIENTATION; TEMPERATURE RANGE 0273-0400 K; ZEEMAN EFFECT