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Title: Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths

An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity enhanced photodetection at the telecommunication wavelength 1.3 μm. The samples were grown by molecular beam epitaxy and RTD-mesas with ring-shaped contacts were fabricated. Electrical and optical properties were investigated at room temperature. The detector shows maximum photocurrent for the optical resonance at a wavelength of 1.29 μm. At resonance a high sensitivity of 3.1×10{sup 4} A/W and a response up to several pA per photon at room temperature were found.
Authors:
; ; ; ; ;  [1]
  1. Technische Physik, Physikalisches Institut, Universität Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg (Germany)
Publication Date:
OSTI Identifier:
22257033
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; RADIATION DETECTORS; TEMPERATURE RANGE 0273-0400 K; TUNNEL DIODES; TUNNEL EFFECT