Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Journal Article · Mon Jan 06 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4858961· OSTI ID:22257015

Baine, P.; Armstrong, B. M.; McNeill, D. W. ^[1]; Modreanu, M.; Hurley, P. K. ^[2]

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1. School of Electronics, Electrical Engineering and Computer Science, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH (United Kingdom)
2. Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.

• OSTI ID: 22257015
• Journal Information: Applied Physics Letters, Vol. 104, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM OXIDES
DEPOSITION
FERMI LEVEL
GERMANIUM
HAFNIUM OXIDES
LAYERS