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Title: Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

Fermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al{sub 2}O{sub 3} interfacial layer (∼2.8 nm). For diodes with an Al{sub 2}O{sub 3} interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO{sub 2} interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm.
Authors:
; ; ;  [1] ; ;  [2]
  1. School of Electronics, Electrical Engineering and Computer Science, Queen's University Belfast, Ashby Building, Stranmillis Road, Belfast BT9 5AH (United Kingdom)
  2. Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland)
Publication Date:
OSTI Identifier:
22257015
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM; ALUMINIUM OXIDES; DEPOSITION; FERMI LEVEL; GERMANIUM; HAFNIUM OXIDES; LAYERS