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Title: Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.
Authors:
; ; ; ;  [1] ; ; ;  [2] ;  [3] ; ;  [1] ;  [4]
  1. Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France)
  2. Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France)
  3. (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France)
  4. (France)
Publication Date:
OSTI Identifier:
22257012
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; QUANTUM WELLS; RECOMBINATION; SILICON; SWITCHES