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Title: Single-photon emission from cubic GaN quantum dots

We report the demonstration of single-photon emission from cubic GaN/AlN quantum dots grown by molecular beam epitaxy. We have observed spectrally clean and isolated emission peaks from these quantum dots. Clear single-photon emission was detected by analyzing one such peak at 4 K. The estimated g{sup (2)}[0] value is 0.25, which becomes 0.05 when corrected for background and detector dark counts. We have also observed the single-photon nature of the emission up to 100 K (g{sup (2)}[0] = 0.47). These results indicate that cubic GaN quantum dots are possible candidates for high-temperature operating UV single-photon sources with the possibility of integration into photonic nanostructures.
Authors:
 [1] ; ;  [2] ; ;  [3] ;  [1] ;  [4]
  1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  2. Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
  3. Universität Paderborn, Department Physik, Warburger Str. 100, 33095 Paderborn (Germany)
  4. (Japan)
Publication Date:
OSTI Identifier:
22257011
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM NITRIDES; GALLIUM NITRIDES; MOLECULAR BEAM EPITAXY; PHOTON EMISSION; PHOTONS; QUANTUM DOTS; TEMPERATURE RANGE 0065-0273 K