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Title: Photocurrent in bulk heterojunction solar cells with similar electron and hole mean free path

We present photocurrents at several temperatures carried out in a bulk heterojunction photovoltaic device. To explain the results, we developed an analytical model assuming non-injecting contacts and equal mean free paths for electrons and holes. The fitting of the equation to the experimental data provided the temperature evolution of the charge transfer state dissociation probability (P) and μτ, where μ is the charge carrier mobility and τ is the charge carrier lifetime. The photocurrent expression tends towards a saturation value of eGPL for high electric fields, where GP is the generation rate of charge carriers.
Authors:
;  [1]
  1. Instituto de Física de São Carlos, Universidade de São Paulo, C.P. 369, 13560-970 São Carlos, SP (Brazil)
Publication Date:
OSTI Identifier:
22255286
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 22; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; CHARGE CARRIERS; ELECTRIC FIELDS; ELECTRONS; HETEROJUNCTIONS; MEAN FREE PATH; PHOTOCURRENTS; PHOTOVOLTAIC EFFECT; SOLAR CELLS