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Title: Indium tin oxide and indium phosphide heterojunction nanowire array solar cells

Heterojunction solar cells were formed with a position-controlled InP nanowire array sputtered with indium tin oxide (ITO). The ITO not only acted as a transparent electrode but also as forming a photovoltaic junction. The devices exhibited an open-circuit voltage of 0.436 V, short-circuit current of 24.8 mA/cm{sup 2}, and fill factor of 0.682, giving a power conversion efficiency of 7.37% under AM1.5 G illumination. The internal quantum efficiency of the device was higher than that of the world-record InP cell in the short wavelength range.
Authors:
; ;  [1] ;  [1] ;  [2]
  1. Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Kita 13 Nishi 8, Sapporo 060–8628 (Japan)
  2. (JST), Honcho Kawaguchi, 332–0012 Saitama (Japan)
Publication Date:
OSTI Identifier:
22255285
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; FILL FACTORS; HETEROJUNCTIONS; INDIUM PHOSPHIDES; PHOTOVOLTAIC EFFECT; QUANTUM EFFICIENCY; SOLAR CELLS; TIN OXIDES