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Title: Influence of different illumination profiles on the on-state resistances of silicon carbide photoconductive semiconductor switches

Characteristics of a silicon-carbide (SiC) photoconductive switch under different illumination profiles are presented. We triggered a V-doped semi-insulated 6H-SiC switch with lateral geometry using a laser beam of 532-nm wavelength. Photoconductivity tests for different spot profiles and locations show that such switches achieve a minimum on-state resistance when the switching gap is illuminated. The differences between on-state resistances are small for various partial illuminations of the switching gap. Semiconductor modeling is used to simulate the electric field and current profiles for different partial illuminations. The simulation results show poor on-state switch performance when partially illuminated. Based on these results, a more revealing circuit model for the switch matches well with experimental results for partial illuminations.
Authors:
; ; ; ;  [1]
  1. College of Optoelectronic Science and Engineering, National University of Defense Technology, Changsha 410073 (China)
Publication Date:
OSTI Identifier:
22254951
Resource Type:
Journal Article
Resource Relation:
Journal Name: Review of Scientific Instruments; Journal Volume: 85; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; ELECTRIC FIELDS; GEOMETRY; ILLUMINANCE; LASERS; PERFORMANCE; PHOTOCONDUCTIVITY; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SILICON CARBIDES; SIMULATION