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Title: Direct evidence for self-trapping of excitons by indium nanowires at In/Si(111) surface

Abstract

We report on the real-space observation of self-trapped excitons using scanning tunneling microscope. Electrons of In nanowires transfer to the Si substrate, yielding charge-transfer excitons at In/Si interface. The strong coupling between excitons and lattice vibrations leads to the exciton localization at low carrier density and 80.0 K. Exciton condensation was observed at the proper carrier density and its microscopic origin is discussed.

Authors:
 [1];  [2]
  1. Institute of Applied Physics, CREST-JST, University of Tsukuba, 305-8573 Tsukuba (Japan)
  2. Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 (China)
Publication Date:
OSTI Identifier:
22254141
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CARRIER DENSITY; EXCITONS; INDIUM; LATTICE VIBRATIONS; QUANTUM WIRES; SCANNING TUNNELING MICROSCOPY; SUBSTRATES

Citation Formats

Xu, Maojie, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, and Zhang, Yafei. Direct evidence for self-trapping of excitons by indium nanowires at In/Si(111) surface. United States: N. p., 2013. Web. doi:10.1063/1.4828982.
Xu, Maojie, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, & Zhang, Yafei. Direct evidence for self-trapping of excitons by indium nanowires at In/Si(111) surface. United States. https://doi.org/10.1063/1.4828982
Xu, Maojie, Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240, and Zhang, Yafei. 2013. "Direct evidence for self-trapping of excitons by indium nanowires at In/Si(111) surface". United States. https://doi.org/10.1063/1.4828982.
@article{osti_22254141,
title = {Direct evidence for self-trapping of excitons by indium nanowires at In/Si(111) surface},
author = {Xu, Maojie and Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai 200240 and Zhang, Yafei},
abstractNote = {We report on the real-space observation of self-trapped excitons using scanning tunneling microscope. Electrons of In nanowires transfer to the Si substrate, yielding charge-transfer excitons at In/Si interface. The strong coupling between excitons and lattice vibrations leads to the exciton localization at low carrier density and 80.0 K. Exciton condensation was observed at the proper carrier density and its microscopic origin is discussed.},
doi = {10.1063/1.4828982},
url = {https://www.osti.gov/biblio/22254141}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 103,
place = {United States},
year = {Mon Nov 04 00:00:00 EST 2013},
month = {Mon Nov 04 00:00:00 EST 2013}
}