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Title: Growth and properties of crystalline barium oxide on the GaAs(100) substrate

Growing a crystalline oxide film on III-V semiconductor renders possible approaches to improve operation of electronics and optoelectronics heterostructures such as oxide/semiconductor junctions for transistors and window layers for solar cells. We demonstrate the growth of crystalline barium oxide (BaO) on GaAs(100) at low temperatures, even down to room temperature. Photoluminescence (PL) measurements reveal that the amount of interface defects is reduced for BaO/GaAs, compared to Al{sub 2}O{sub 3}/GaAs, suggesting that BaO is a useful buffer layer to passivate the surface of the III-V device material. PL and photoemission data show that the produced junction tolerates the post heating around 600 °C.
Authors:
; ; ; ; ; ;  [1] ;  [1] ;  [2] ; ; ;  [3]
  1. Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland)
  2. (Russian Federation)
  3. Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere (Finland)
Publication Date:
OSTI Identifier:
22254137
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; BARIUM OXIDES; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SOLAR CELLS