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Title: Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [2] ;  [2] ;  [3] ; ; ;  [4] ; ; ; ; ; ; ; ; ;  [5]
  1. Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)
  2. Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)
  3. (United States)
  4. Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)
  5. Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)
Publication Date:
OSTI Identifier:
22254128
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; DENSITY; DISLOCATIONS; ELECTROLUMINESCENCE; ELECTRON MOBILITY; FAILURES; GALLIUM NITRIDES; LEAKAGE CURRENT; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACES; TRANSISTORS