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Title: Observation of rebirth of metallic paths during resistance switching of metal nanowire

To clarify the mechanism of resistance-switching phenomena, we have investigated the change in the electronic structure of a Ni nanowire device during resistance-switching operations using scanning photoelectron microscopy techniques. We directly observed the disappearance of density of state (DOS) at the Fermi level (E{sub F}) in a high-resistance state and recovery of a finite DOS at E{sub F} in a low-resistance state. These results are direct evidence that the Ni nanowire is fully oxidized after switching to the high-resistance state and that Ni-metal conductive paths in the oxidized nanowire are recovered in the low-resistance state.
Authors:
; ; ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Department of Applied Chemistry, The University of Tokyo, Tokyo 113-8656 (Japan)
  2. (Japan)
  3. RIKEN Advanced Science Institute, Saitama 351-0198 (Japan)
  4. Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Ibaraki 305-0801 (Japan)
  5. (PRESTO), Japan Science and Technology Agency (JST), Saitama 332-0012 (Japan)
Publication Date:
OSTI Identifier:
22254127
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRONIC STRUCTURE; FERMI LEVEL; METALS; NANOSTRUCTURES