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Title: Thermal conductivity of Er{sup +3}:Y{sub 2}O{sub 3} films grown by atomic layer deposition

Cross-plane thermal conductivity of 800, 458, and 110 nm erbium-doped crystalline yttria (Er{sup +3}:Y{sub 2}O{sub 3}) films deposited via atomic layer deposition was measured using the 3ω method at room temperature. Thermal conductivity results show 16-fold increase in thermal conductivity from 0.49 W m{sup −1}K{sup −1} to 8 W m{sup −1}K{sup −1} upon post deposition annealing, partially due to the suppression of the number of the -OH/H{sub 2}O bonds in the films after annealing. Thermal conductivity of the annealed film was ∼70% lower than undoped bulk single crystal yttria. The cumulative interface thermal resistivity of substrate-Er{sup +3}:Y{sub 2}O{sub 3}-metal heater was determined to be ∼2.5 × 10{sup −8} m{sup 2} K/W.
Authors:
; ; ;  [1] ; ; ;  [2]
  1. Mechanical, Aerospace and Nuclear Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  2. Material Sciences Division, Argonne National Laboratory 9700 S. Cass Avenue, Lemont, Illinois 60439 (United States)
Publication Date:
OSTI Identifier:
22254124
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; DEPOSITION; DOPED MATERIALS; ERBIUM; FILMS; MONOCRYSTALS; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THERMAL CONDUCTIVITY; WATER; YTTRIUM OXIDES