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Title: Atomic scattering spectroscopy for determination of the polarity of semipolar AlN grown on ZnO

Determination of the polarity of insulating semipolar AlN layers was achieved via atomic scattering spectroscopy. The back scattering of neutralized He atoms on AlN surfaces revealed the atomic alignment of the topmost layers of semipolar AlN and the ZnO substrate. Pole figures of the scattering intensity were used to readily determine the polarity of these wurtzite-type semipolar materials. In addition, we found that +R-plane AlN epitaxially grows on −R-plane ZnO, indicating that the polarity flips at the semipolar AlN/ZnO interface. This polarity flipping is possibly explained by the appearance of −c and m-faces on the −R ZnO surfaces, which was also revealed by atomic scattering spectroscopy.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505 (Japan)
  2. Department of Applied Chemistry, The University of Tokyo, Tokyo 113-8656 (Japan)
  3. (Japan)
  4. (JST), Tokyo 102-0076 (Japan)
Publication Date:
OSTI Identifier:
22254121
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALIGNMENT; ALUMINIUM NITRIDES; BACKSCATTERING; EPITAXY; HELIUM; LAYERS; SPECTROSCOPY; SUBSTRATES; SURFACES; ZINC OXIDES