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Title: In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.
Authors:
; ; ; ;  [1]
  1. Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia)
Publication Date:
OSTI Identifier:
22254120
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ELECTRON MICROSCOPY; ENERGY BEAM DEPOSITION; GRAPHENE; HONEYCOMB STRUCTURES; LASER RADIATION; P-N JUNCTIONS; PULSED IRRADIATION; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY