Single photon emission from site-controlled InGaN/GaN quantum dots
Abstract
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.
- Authors:
-
- Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)
- Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)
- Publication Date:
- OSTI Identifier:
- 22254105
- Resource Type:
- Journal Article
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; CORRELATION FUNCTIONS; FABRICATION; GALLIUM NITRIDES; LIFETIME; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTONS; QUANTUM DOTS; TEMPERATURE RANGE 0013-0065 K
Citation Formats
Zhang, Lei, Hill, Tyler A., Deng, Hui, Teng, Chu-Hsiang, Lee, Leung-Kway, and Ku, Pei-Cheng. Single photon emission from site-controlled InGaN/GaN quantum dots. United States: N. p., 2013.
Web. doi:10.1063/1.4830000.
Zhang, Lei, Hill, Tyler A., Deng, Hui, Teng, Chu-Hsiang, Lee, Leung-Kway, & Ku, Pei-Cheng. Single photon emission from site-controlled InGaN/GaN quantum dots. United States. https://doi.org/10.1063/1.4830000
Zhang, Lei, Hill, Tyler A., Deng, Hui, Teng, Chu-Hsiang, Lee, Leung-Kway, and Ku, Pei-Cheng. 2013.
"Single photon emission from site-controlled InGaN/GaN quantum dots". United States. https://doi.org/10.1063/1.4830000.
@article{osti_22254105,
title = {Single photon emission from site-controlled InGaN/GaN quantum dots},
author = {Zhang, Lei and Hill, Tyler A. and Deng, Hui and Teng, Chu-Hsiang and Lee, Leung-Kway and Ku, Pei-Cheng},
abstractNote = {Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.},
doi = {10.1063/1.4830000},
url = {https://www.osti.gov/biblio/22254105},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 103,
place = {United States},
year = {Mon Nov 04 00:00:00 EST 2013},
month = {Mon Nov 04 00:00:00 EST 2013}
}
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