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Title: Single photon emission from site-controlled InGaN/GaN quantum dots

Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.
Authors:
; ;  [1] ; ; ;  [2]
  1. Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)
  2. Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)
Publication Date:
OSTI Identifier:
22254105
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACCURACY; CORRELATION FUNCTIONS; FABRICATION; GALLIUM NITRIDES; LIFETIME; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTONS; QUANTUM DOTS; TEMPERATURE RANGE 0013-0065 K