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Title: Networks of silicon nanowires: A large-scale atomistic electronic structure analysis

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched nanostructures are investigated in the subsystem level as well as in full assembly. The end product is a simple but versatile expression for the bandgap and band edge alignments of multiply-crossing Si nanowires for various diameters, number of crossings, and wire orientations. Further progress along this line can potentially topple the bottom-up approach for Si nanowire networks to a top-down design by starting with functionality and leading to an enabling structure.
Authors:
;  [1] ; ;  [2]
  1. Department of Physics, Bilkent University, Bilkent, Ankara 06800 (Turkey)
  2. Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)
Publication Date:
OSTI Identifier:
22254096
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRONIC STRUCTURE; ORIENTATION; POTENTIALS; QUANTUM WIRES; SILICON