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Title: Metal-insulator transition in nanocomposite VO{sub x} films formed by anodic electrodeposition

The ability to grow VO{sub 2} films by electrochemical methods would open a low-cost, easily scalable production route to a number of electronic devices. We have synthesized VO{sub x} films by anodic electrodeposition of V{sub 2}O{sub 5}, followed by partial reduction by annealing in Ar. The resulting films are heterogeneous, consisting of various metallic/oxide phases and including regions with VO{sub 2} stoichiometry. A gradual metal insulator transition with a nearly two order of magnitude change in film resistance is observed between room temperature and 140 °C. In addition, the films exhibit a temperature coefficient of resistance of ∼ −2.4%/ °C from 20 to 140 °C.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)
  2. Department for Materials Science LKO, University of Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen (Germany)
Publication Date:
OSTI Identifier:
22254093
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ELECTROCHEMISTRY; ELECTRODEPOSITION; FILMS; STOICHIOMETRY; TEMPERATURE COEFFICIENT; VANADIUM OXIDES