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Title: AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics

AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.
Authors:
; ;  [1] ; ;  [2]
  1. H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
  2. IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
Publication Date:
OSTI Identifier:
22254080
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; EQUIPMENT; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDES; LAYERS; NANOSTRUCTURES; SIMULATION; THERMAL CONDUCTIVITY; THERMOGRAPHY; THICKNESS