AlGaN/GaN field effect transistors for power electronics—Effect of finite GaN layer thickness on thermal characteristics
- H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL (United Kingdom)
- IMEC, Kapeldreef 75, B3001 Leuven (Belgium)
AlGaN/GaN heterostructure field effect transistors with a 150 nm thick GaN channel within stacked Al{sub x}Ga{sub 1−x}N layers were investigated using Raman thermography. By fitting a thermal simulation to the measured temperatures, the thermal conductivity of the GaN channel was determined to be 60 W m{sup −1} K{sup −1}, over 50% less than typical GaN epilayers, causing an increased peak channel temperature. This agrees with a nanoscale model. A low thermal conductivity AlGaN buffer means the GaN spreads heat; its properties are important for device thermal characteristics. When designing power devices with thin GaN layers, as well as electrical considerations, the reduced channel thermal conductivity must be considered.
- OSTI ID:
- 22254080
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer