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Title: Lattice constants and optical response of pseudomorph Si-rich SiGe:B

Pseudomorph epitaxial films of Si{sub 1−x}Ge{sub x}:B were grown on undoped (100) Si for x ≤ 0.026 and the B concentration of 1.3 × 10{sup 20} cm{sup −3}.The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized {sup 11}B and {sup 10}B vibrations have been observed. The spectral shift of E{sub 1} electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.
Authors:
 [1] ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic)
  2. ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic)
  3. Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)
  4. (Korea, Republic of)
Publication Date:
OSTI Identifier:
22254079
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BORON 10; BORON 11; DIFFRACTION; EPITAXY; GERMANIUM SILICIDES; LATTICE PARAMETERS; PLASMA; SPECTRAL SHIFT; ULTRAVIOLET RADIATION; X RADIATION