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Title: Room temperature excitonic recombination in GaInN/GaN quantum wells

The dependence of radiative and nonradiative lifetimes on the excess carrier density in GaInN/GaN quantum wells is studied via time-resolved photoluminescence spectroscopy over a wide range of excitation densities. Our results differ from the predictions of simple free-carrier models: density independent radiative lifetimes clearly evidence the excitonic nature even at room temperature. At high densities, nonradiative lifetimes are weakly temperature dependent and proportional to the inverse of the density, implying an excitonic, threshold-less Auger process. Furthermore, in the intermediate density regime between low and high injection, an increase of the nonradiative lifetimes is observed, which is typical for Shockley-Read-Hall-type recombination.
Authors:
; ; ;  [1] ; ; ; ;  [2]
  1. Institute of Applied Physics, Technische Universität Braunschweig, Mendelssohnstraße 2, 38106 Braunschweig (Germany)
  2. Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg (Germany)
Publication Date:
OSTI Identifier:
22254078
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; DENSITY; GALLIUM NITRIDES; HIGH ROOMS; PHOTOLUMINESCENCE; QUANTUM WELLS; RECOMBINATION; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION