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Title: Long-wavelength emission in photo-pumped GaAs{sub 1−x}Bi{sub x} laser with low temperature dependence of lasing wavelength

This study demonstrates long-wavelength emission of up to 1204 nm in photo-pumped GaAs{sub 1−x}Bi{sub x} lasers grown by molecular beam epitaxy under low temperature conditions. The characteristic temperature (T{sub 0}) between 20 and 80 °C in the GaAs{sub 1−x}Bi{sub x} lasers with Al{sub 0.3}Ga{sub 0.7}As electron blocking layer is approximately 100 K, which is larger than that of the typical 1.3-μm InGaAsP Fabry-Perot laser diodes (FP-LDs; T{sub 0} = 66 K). The temperature coefficient of the lasing wavelength is approximately 40% of that of InGaAsP FP-LDs.
Authors:
; ; ;  [1]
  1. Department of Electronics, Kyoto Institute of Technology, Matsugasaki, Sakyo, Kyoto 606-8585 (Japan)
Publication Date:
OSTI Identifier:
22254077
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; APPROXIMATIONS; DEPLETION LAYER; GALLIUM ARSENIDES; LANTHANUM SELENIDES; LASERS; MOLECULAR BEAM EPITAXY; TEMPERATURE COEFFICIENT; TEMPERATURE RANGE 0273-0400 K; WAVELENGTHS