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Title: Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

This letter reports on the temperature behavior of the structural and electrical properties of Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 °C showed a decreasing temperature behavior of the specific contact resistance ρ{sub C}, which was explained by a thermionic field emission mechanism, an increasing trend is observed in the contacts formed at 850 °C. In this case, ρ{sub C} exhibits a “metal-like” behavior, i.e., describable by a T{sup 1.8} dependence. The microstructural analysis of the interfacial region allowed to explain the results with the formation of metallic intrusions contacting directly the two dimensional electron gas.
Authors:
 [1] ; ;  [2]
  1. IPD R and D, STMicroelectronics, Stradale Primosole 50, 95121 Catania (Italy)
  2. CNR-IMM, Strada VIII, n. 5, Zona Industriale, 95121 Catania (Italy)
Publication Date:
OSTI Identifier:
22254074
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANNEALING; CORRELATIONS; ELECTRICAL PROPERTIES; ELECTRON GAS; FIELD EMISSION; GALLIUM NITRIDES; MICROSTRUCTURE; PLUTONIC ROCKS; TEMPERATURE DEPENDENCE