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Title: GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

A GaInN light-emitting diode (LED) structure is analyzed that employs a separate epitaxial growth for the p-type region, i.e., the AlGaN electron-blocking layer (EBL) and p-type GaN cladding layer, followed by wafer or chip bonding. Such LED structure has a polarization-inverted EBL and allows for uncompromised epitaxial-growth optimization of the p-type region, i.e., without the need to consider degradation of the quantum-well active region during p-type region growth. Simulations show that such an LED structure reduces electron leakage, reduces the efficiency droop, improves hole injection, and has the potential to extend high efficiencies into the green spectral region.
Authors:
; ; ;  [1] ;  [1] ;  [2] ; ; ; ;  [3]
  1. Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  2. (Korea, Republic of)
  3. LED Business, Samsung Electronics, Yongin 446-920 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22254072
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; BONDING; CLADDING; DEPLETION LAYER; EFFICIENCY; ELECTRONS; EPITAXY; GALLIUM NITRIDES; LIGHT EMITTING DIODES; POLARIZATION; QUANTUM WELLS; SIMULATION