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Title: The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors.
Authors:
;  [1] ;  [2] ;  [2] ;  [3]
  1. Department of Chemistry, Duke University, Durham, North Carolina 27708 (United States)
  2. U.S. Army Aviation and Missile Research, Development, and Engineering Center, Redstone Arsenal, Alabama 35898 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22254070
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; EXCITATION; PHOTOLUMINESCENCE; POWDERS; QUANTUM EFFICIENCY; REACTION KINETICS; ZINC OXIDES