The dependence of ZnO photoluminescence efficiency on excitation conditions and defect densities

Journal Article · Mon Nov 11 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4829745· OSTI ID:22254070

Simmons, Jay G.; Liu, Jie ^[1]; Foreman, John V. ^[2]

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1. Department of Chemistry, Duke University, Durham, North Carolina 27708 (United States)
2. U.S. Army Aviation and Missile Research, Development, and Engineering Center, Redstone Arsenal, Alabama 35898 (United States)

The quantum efficiencies of both the band edge and deep-level defect emission from annealed ZnO powders were measured as a function of excitation fluence and wavelength from a tunable sub-picosecond source. A simple model of excitonic decay reproduces the observed excitation dependence of rate constants and associated trap densities for all radiative and nonradiative processes. The analysis explores how phosphor performance deteriorates as excitation fluence and energy increase, provides an all-optical approach for estimating the number density of defects responsible for deep-level emission, and yields new insights for designing efficient ZnO-based phosphors.

• OSTI ID: 22254070
• Journal Information: Applied Physics Letters, Vol. 103, Issue 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
EXCITATION
PHOTOLUMINESCENCE
POWDERS
QUANTUM EFFICIENCY
REACTION KINETICS
ZINC OXIDES