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Title: Influence of aluminium doping on thermoelectric performance of atomic layer deposited ZnO thin films

We study the effect of Al doping on thermoelectric power factor of ZnO films grown using atomic layer deposition method. The overall doping level is tuned by either varying the precursor pulsing sequence or by varying the number of precursor pulses while keeping the sequence unchanged. We observe that commonly utilized doping approach when periodic dopant layers are densely packed results in reduced power factor. At the same time, we find that thermoelectric performance can be improved by clustering the dopants. In addition, the clustering was found to tune the preferred crystal orientation of the polycrystalline film.
Authors:
; ; ;  [1]
  1. Department of Micro- and Nanosciences, Aalto University, FI-00076 Aalto (Finland)
Publication Date:
OSTI Identifier:
22254062
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM; DEPOSITION; DOPED MATERIALS; LAYERS; PERIODICITY; POLYCRYSTALS; POWER FACTOR; THIN FILMS; ZINC OXIDES